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Inventi Impact: VLSI

Articles

  • Inventi:evs/47023/22
    Comparative Characterization of NWFET and FinFET Transistor Structures Using TCAD Modeling
    01-Jan-2023 Research 2023 : January-March
    Konstantin O Petrosyants, Denis S Silkin, Dmitriy A Popov

    A complete comparison for 14 nm FinFET and NWFET with stacked nanowires was carried out. The electrical and thermal performances in two device structures were analyzed based on TCAD simulation results. The electro-thermal TCAD models were calibrated to data measured on 30–7 nm FinFETs and NWFETs. The full set of output electrical device parameters Ion, Io f f , SS, Vth, and maximal device temperature Tmax was discussed to achieve the optimum VLSI characteristics.

    How to Cite this Article
    Attribution/ CC Compliant Citation: Petrosyants, Konstantin O., Denis S. Silkin, and Dmitriy A. Popov. "Comparative Characterization of NWFET and FinFET Transistor Structures Using TCAD Modeling." Micromachines 13.8 (2022): 1293. https://doi.org/10.3390/mi13081293 http://creativecommons.org/licenses/by/4.0/ Some formatting elements, header, footer, logos, dates and pagination were modified while adapting this article.
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